BSH111BKR NXP USA Inc. MOSFET N-CH 55V SOT-23 N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB (SOT23)

Part Nnumber
BSH111BKR
Description
MOSFET N-CH 55V SOT-23 N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB (SOT23)
Producer
NXP USA Inc.
Basic price
0,24 EUR

The product with part number BSH111BKR (MOSFET N-CH 55V SOT-23 N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB (SOT23)) is from company NXP USA Inc. and distributed with basic unit price 0,24 EUR. Minimal order quantity is 1 pc, Approx. production time is 42 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 30pF @ 30V Vgs (Max) ±10V FET Feature - Power Dissipation (Max) 302mW (Ta) Rds On (Max) @ Id, Vgs 4 Ohm @ 200mA, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB (SOT23) Package / Case TO-236-3, SC-59, SOT-23-3


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